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nextnano software

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Software for the simulation of electronic and optoelectronic semiconductor nanodevices (Schrödinger-Poisson-Current solver), University price on nanobay.com: 2.300 EUR per year and per research group
Sales price 2300,00 €
Sales price without tax 2300,00 €
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Description

1-year license for the software packages nextnanomat/nextnano++/nextnano³ (excluding NEGF feature for quantum cascade lasers), Access to tutorial input files, Updates, Basic support (e.g. understanding input file syntax, reproducing tutorial’s results, understanding basic functionality of the software)

Applications:

Quantum Wires

  • Calculated wave functions (ψ²) of the electron (e), heavy hole (hh) and light hole (lh) of a T-shaped quantum wire structure. It is possible to calculate the spatial overlap integral of the electron – heavy hole envelope wave functions which is an important quantity to describe interband transitions.

Quantum Cascade Lasers

  • In quantum cascade lasers, strain can be used to alter the band offsets and thus the lasing wavelength. The nextnano software automatically determines the band offsets taking into account strain and deformation potentials and calculates the corresponding wave functions. The selection rules for intraband transitions are governed by the dipole matrix element between envelope functions.

Quantum Dots

  • Pyramidal, hexagonal or lens shaped 3D quantum dots: Calculation of strain, piezo- and pyroelectric charges, self-consistent Schrödinger-Poisson equation for zinc blende and wurtzite materials. The figures show the electron and hole wave functions. An applied electric field leads to the separation of the electron and the hole (Quantum Confined Stark Effect).

Optical Absorption in Quantum Wells

  • The figures show the electron and hole eigenstates of a quantum well and the resulting absorption spectrum. The most prominent interband transitions are indicated. Excellent agreement with experiment has been achieved.

Energy Dispersion

  • Calculation of the energy dispersion E(k) of both zinc blende and wurtzite materials including strain and arbitrary crystallographic growth directions within 8-band k.p theory.

Strained Silicon / SiGe

  • Calculation of biaxial tensile and compressive strain and its effect on the energy dispersion E(k) of electrons and holes within 6-band k.p theory. It is also possible to read in arbitrary strain tensors (e.g. uniaxial strain along [110] direction).

Superlattices

  • Calculation of miniband dispersions in superlattices in one, two and three dimensions.

Bio Chips

  • Possible applications of semiconductor-electrolyte systems, so-called ISFETs (Ion-Sensitive Field Effect Transistor) are: Electrolyte Gate AlGaN/GaN Field Effect Transistor as pH sensor Detection of proteins with SOI (silicon-on-insulator) electrolyte sensor.
  • Self-consistent Poisson-Boltzmann equation to calculate the ion distribution in electrolytes

 

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