Frankfurt (Oder)/San Francisco. Scientist Dr. Bernd Heinemann of IHP – Innovations for High Performance Microelectronics will present results on silicon-germanium heterobipolar transistors (SiGe HBTs) developed in Frankfurt (Oder) on the “International Electron Devices Meeting” (IEDM) in San Francisco. His contribution titled “SiGe HBT with fT/fmax of 505 GHz/720 GHz “ presents speed parameters that set new standards for silicon transistors. “To present at IEDM is a valuable conclusion of the project ‘DOTSEVEN’, funded by the European Union. Together with Infineon and twelve other project partners from a total of six countries, the four-year project focused on developing SiGe HBTs with a maximum oscillation frequency, which is also referred to as fmax, of 0.7 THz,” says Dr. Bernd Heinemann, project manager at IHP.